GMSEMI

Diodes, MOSFETs, transistors, SiC/GaN and discrete power semiconductors

 

About the manufacturer

GMSEMI - Changzhou Galaxy Century Microelectronics - is an integrated device manufacturer focused on discrete and power semiconductor technologies. Its portfolio covers traditional silicon devices as well as newer wide-bandgap technologies, allowing the company to address rectification, protection and switching functions across a broad range of voltage and power levels.

The product range includes standard, fast and Schottky rectifiers, Zener, TVS and ESD protection devices, bipolar transistors, MOSFETs, IGBTs and selected SiC and GaN devices. The manufacturer also offers optoelectronic and integrated power solutions. This broad technology mix supports applications from low-voltage consumer electronics to higher-power converters and industrial energy systems.

Silicon, SiC and GaN devices provide different trade-offs in cost, conduction loss, switching speed, gate-drive requirements and thermal performance. Designers therefore need to select the device technology as part of the complete power-stage architecture rather than only by maximum voltage or current. Blocking voltage, RDS(on) or forward drop, switching charge, recovery behavior, junction-temperature limit and package thermal resistance are key parameters in power supplies, chargers, motor drives and energy-conversion equipment.

 

Applications

GMSEMI components cover a wide range of functions, from rectification and signal protection to power switching in modern converters.

  • power supplies and adapters.
  • automotive.
  • home appliances and consumer electronics.
  • industrial automation.
  • converters and power electronics.
  • Fast chargers and adapters – high-frequency rectification and switching.
  • Solar and energy-storage converters – high-voltage power switching and protection.

 

GMSEMI products available from Maritex

The GMSEMI range available from Maritex includes discrete semiconductors for rectification, protection and switching. Parts can be selected by voltage, current, switching speed, device technology and package.

Available product groups include:

  • Schottky, fast and standard rectifier diodes.
  • Power MOSFET, IGBT and wide-bandgap device families.
  • diodes and rectifiers.
  • TVS/Zener/ESD protection diodes.
  • transistors and MOSFETs.
  • SiC/GaN power devices.

 

For power circuits, conduction and switching losses, maximum junction temperature, pulse capability and package thermal characteristics are particularly important.

contact