Transistors

Transistors are semiconductor electronic components used for signal amplification, current switching, and controlling other circuits. They are fundamental components of integrated circuits and logic circuits.


Types of Transistors:

1. Bipolar Junction Transistors (BJT)

  • Consist of three semiconductor layers (NPN or PNP).
  • Operate by controlling the base current, which regulates a larger current flow between the collector and the emitter.
  • Used in audio amplifiers, logic circuits, and power controllers.

2. Insulated Gate Bipolar Transistors (IGBT)

  • Combine the advantages of MOSFET and BJT transistors, offering high efficiency and high conduction currents.
  • Used in power converters, inverters, and high-power motor controllers.

3. Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET)

  • Operate based on an electric field that controls the current flow between the drain and the source.
  • Include N-channel and P-channel MOSFETs, which are widely used in digital electronics and power electronics.
  • Commonly found in switching power supplies, digital circuits, and motor control systems.
     

Applications of Transistors

Transistors are essential components in many technological fields, including:

  • Switched-mode power supplies (SMPS) – used for energy conversion and voltage regulation.
  • Audio amplifiers – enhance sound signal quality in audio devices.
  • Motor control and robotics – key components in industrial automation and automotive applications.
  • Communication systems – used in telephony, radio, and 5G technology.
  • Power electronics industry – applied in inverters, converters, and photovoltaic systems.
     

Why Choose Transistors?

High energy efficiency – essential for energy-saving systems.
Wide compatibility – available in various types suited to specific applications.
Fast switching speed – ideal for impulse and digital circuits.
Versatile applications – from simple control circuits to advanced industrial automation.

 

Items per page:
Transistor: N-MOSFET; unipolar; 1200V; 9A; 1.5ohm; 300W; POWER MOS 7; -55+150 deg.C; SMD; D3PAK
Quantity pcs. Net price PLN/pcs.
1+ 135,2705
3+ 121,7425
10+ 107,5685
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1+ 155,268
3+ 139,7545
10+ 123,5095
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Transistor: N-MOSFET; unipolar; 1200V; 10A; 1.5ohm; POWER MOS 5; -55+150 deg.C; THT; TO247-3
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1+ 105,1555
3+ 94,658
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Transistor: N-MOSFET; unipolar; 1200V; ; ; POWER MOS 5; -55+150 deg.C; THT; TO247-3
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1+ 69,0365
3+ 61,864
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1+ 111,017
3+ 99,9495
10+ 87,7705
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Transistor: N-MOSFET; unipolar; 1200V; 30A; 0.4ohm; 893W; POWER MOS 7; -55+150 deg.C; THT; TO264MAX
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1+ 404,3485
3+ 363,9355
10+ 321,5655
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Transistor: N-MOSFET; unipolar; 1200V; 3.5A; 4.7ohm; 135W; POWER MOS 7; -55+150 deg.C; THT; TO247-3
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1+ 59,337
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Transistor: N-MOSFET; unipolar; 1200V; 3.5A; 4.7ohm; 135W; POWER MOS 7; -55+150 deg.C; SMD; D3PAK
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1+ 64,9325
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Transistor: N-MOSFET; unipolar; 1200V; 22A; 0.57ohm; 690W; POWER MOS 7; -55+150 deg.C; THT; TO247MAX
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1+ 216,1725
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10+ 171,931
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Transistor: N-MOSFET; unipolar; 1200V; 22A; 0.57ohm; 690W; POWER MOS 7; -55+150 deg.C; THT; TO247MAX
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1+ 207,746
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10+ 165,186
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Transistor: N-MOSFET; unipolar; 1200V; 22A; 0.57ohm; 690W; POWER MOS 7; -55+150 deg.C; THT; TO264
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1+ 231,23
3+ 208,0975
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1+ 187,9385
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10+ 149,4825
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Transistor: N-MOSFET; unipolar; 1200V; 20A; 0.6ohm; 625W; POWER MOS 5; -55+150 deg.C; THT; TO264
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1+ 112,822
3+ 101,517
10+ 89,718
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Transistor: N-MOSFET; unipolar; 1200V; 18A; 0.67mohm; 565W; POWER MOS 7; -55+150 deg.C; THT; TO264
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1+ 187,9385
3+ 169,176
10+ 149,4825
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Transistor: N-MOSFET; unipolar; 1200V; 16A; 0.8ohm; 520W; POWER MOS 5; -55+150 deg.C; THT; TO264
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1+ 137,4935
3+ 123,7755
10+ 109,3735
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Transistor: N-MOSFET; unipolar; 800V; 8A; 0.8ohm; 334W; POWER MOS 8; -55+150 deg.C; THT; TO247-3
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1+ 29,8775
3+ 26,8945
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Transistor: N-MOSFET; unipolar; 1200V; 9A; 1.2ohm; 625W; POWER MOS 8; -55+150 deg.C; THT; TO247-3
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1+ 58,843
3+ 52,9435
10+ 46,778
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Transistor: N-MOSFET; unipolar; 1200V; 9A; 1.2ohm; 625W; POWER MOS 8; -55+150 deg.C; SMD; D3PAK
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1+ 83,9705
3+ 74,8125
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Transistor; IGBT; 1200V; 20A; 250W; POWER MOS 8, PT; -55+175 deg.C; THT; TO247-3
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1+ 45,5905
3+ 41,7525
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Transistor; IGBT; 1200V; 20A; 250W; POWER MOS 8, PT; -55+175 deg.C; THT; TO247-3
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1+ 34,1335
3+ 30,723
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Transistor: N-MOSFET; unipolar; 1000V; 14A; 980mohm; 500W; POWER MOS 8; -55+150 deg.C; THT; TO247
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1+ 38,6935
3+ 37,3065
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Transistor: N-MOSFET; unipolar; 1000V; 9A; 980mohm; 500W; POWER MOS 8; -55+150 deg.C; SMD; D3PAK
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1+ 49,115
3+ 44,403
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Transistor: N-MOSFET; unipolar; 1000V; 9A; 980mohm; 500W; POWER MOS 8; -55+150 deg.C; SMD; D3PAK
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1+ 41,876
3+ 37,544
10+ 33,174
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Transistor: N-MOSFET; unipolar; 1000V; 9A; 880mohm; 500W; POWER MOS 8; -55+150 deg.C; SMD; D3PAK
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1+ 44,669
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Transistor: N-MOSFET; unipolar; 1200V; 9A; 1.1ohm; 625W; POWER MOS 8; -55+150 deg.C; THT; TO247-3
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1+ 55,6985
3+ 49,913
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Transistor: N-MOSFET; unipolar; 1200V; 9A; 1.1ohm; 625W; POWER MOS 8; -55+150 deg.C; SMD; D3PAK
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1+ 79,2965
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Transistor; IGBT; 600V; 123A; 536W; Field Stop; -55+175 deg.C; THT; T-Max
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1+ 111,283
3+ 100,1395
10+ 88,4925
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Transistor; IGBT; 600V; 123A; 536W; Field Stop; -55+175 deg.C; THT; TO264
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1+ 157,0635
3+ 141,36
10+ 124,887
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Transistor; IGBT; 1200V; 22A; 195W; Field Stop; -55+150 deg.C; THT; TO247-3
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1+ 38,152
3+ 34,3235
10+ 30,343
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Transistor; IGBT; 1200V; 22A; 195W; Field Stop; -55+150 deg.C; SMD; D3PAK
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1+ 44,365
3+ 39,919
10+ 35,283
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Transistor; IGBT; 600V; 27A; 250W; POWER MOS 8, PT; -55+150 deg.C; THT; TO247-3
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1+ 30,0295
3+ 27,0085
10+ 23,864
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Transistor; IGBT; 600V; 27A; 250W; POWER MOS 8, PT; -55+150 deg.C; THT; TO247-3
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1+ 26,239
3+ 23,636
10+ 20,881
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Transistor; IGBT; 900V; 21A; 250W; POWER MOS 8, PT; -55+150 deg.C; THT; TO247-3
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1+ 33,6395
3+ 30,305
10+ 26,7805
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Transistor; IGBT; 1200V; 18A; 250W; NPT; -55+150 deg.C; THT; TO247-3
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1+ 30,267
3+ 27,2365
10+ 24,054
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Transistor: N-MOSFET; unipolar; 1000V; 11A; 780mohm; 625W; POWER MOS 8; -55+150 deg.C; THT; TO247-3
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1+ 55,3565
3+ 50,1125
10+ 43,7855
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Transistor: N-MOSFET; unipolar; 1000V; 11A; 780mohm; 625W; POWER MOS 8; -55+150 deg.C; SMD; D3PAK
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1+ 61,9115
3+ 55,7745
10+ 48,7635
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Transistor: N-MOSFET; unipolar; 800V; 11A; 0.58ohm; 625W; POWER MOS 8; -55+150 deg.C; THT; TO247-3
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1+ 31,217
3+ 29,9915
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Transistor: N-MOSFET; unipolar; 800V; 11A; 0.58ohm; 500W; POWER MOS 8; -55+150 deg.C; SMD; D3PAK
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1+ 47,9655
3+ 43,1775
10+ 38,152
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Transistor: N-MOSFET; unipolar; 600V; 12A; 370mohm; 500W; POWER MOS 8; -55+150 deg.C; THT; TO247-3
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1+ 27,778
3+ 25,0135
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Transistor: N-MOSFET; unipolar; 1000V; 12A; 0.7ohm; 335W; POWER MOS 8; -55+150 deg.C; THT; TO247-3
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1+ 52,7915
3+ 47,5
10+ 41,99
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Transistor: N-MOSFET; unipolar; 1000V; 12A; 0.7ohm; 625W; POWER MOS 8; -55+150 deg.C; SMD; D3PAK
Quantity pcs. Net price PLN/pcs.
1+ 0,01
0 items in stock
Transistor: N-MOSFET; unipolar; 800V; 12A; 530mohm; 625W; POWER MOS 8; -55+150 deg.C; THT; TO247-3
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1+ 40,223
3+ 36,2045
10+ 31,9865
0 items in stock
Transistor; IGBT; 600V; 158A; 682W; Field Stop; -55+175 deg.C; THT; T-Max
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1+ 137,18
3+ 123,4715
10+ 109,1075
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Transistor; IGBT; 600V; 24A; 136W; Field Stop; -55+175 deg.C; THT; TO247-3
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1+ 20,691
3+ 18,62
10+ 16,473
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Transistor; IGBT; 600V; 24A; 136W; Field Stop; -55+175 deg.C; THT; TO247-3
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1+ 24,4055
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10+ 19,4275
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Transistor; IGBT; 600V; 24A; 136W; Field Stop; -55+175 deg.C; SMD; D3PAK
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1+ 35,815
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Transistor: N-MOSFET; unipolar; 200V; 100A; 16mohm; 500W; POWER MOS 7; -55+150 deg.C; THT; TO247MAX
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1+ 145,5305
3+ 131,0145
10+ 115,767
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Transistor: N-MOSFET; unipolar; 200V; 100A; 16mohm; 694W; POWER MOS 7; -55+150 deg.C; THT; TO247MAX
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1+ 142,5855
3+ 128,3355
10+ 113,392
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Transistor: N-MOSFET; unipolar; 200V; 100A; 16mohm; 694W; POWER MOS 7; -55+150 deg.C; THT; TO264
Quantity pcs. Net price PLN/pcs.
1+ 145,5305
3+ 131,0145
10+ 115,767
0 items in stock