Transistors

Transistors are semiconductor electronic components used for signal amplification, current switching, and controlling other circuits. They are fundamental components of integrated circuits and logic circuits.


Types of Transistors:

1. Bipolar Junction Transistors (BJT)

  • Consist of three semiconductor layers (NPN or PNP).
  • Operate by controlling the base current, which regulates a larger current flow between the collector and the emitter.
  • Used in audio amplifiers, logic circuits, and power controllers.

2. Insulated Gate Bipolar Transistors (IGBT)

  • Combine the advantages of MOSFET and BJT transistors, offering high efficiency and high conduction currents.
  • Used in power converters, inverters, and high-power motor controllers.

3. Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET)

  • Operate based on an electric field that controls the current flow between the drain and the source.
  • Include N-channel and P-channel MOSFETs, which are widely used in digital electronics and power electronics.
  • Commonly found in switching power supplies, digital circuits, and motor control systems.
     

Applications of Transistors

Transistors are essential components in many technological fields, including:

  • Switched-mode power supplies (SMPS) – used for energy conversion and voltage regulation.
  • Audio amplifiers – enhance sound signal quality in audio devices.
  • Motor control and robotics – key components in industrial automation and automotive applications.
  • Communication systems – used in telephony, radio, and 5G technology.
  • Power electronics industry – applied in inverters, converters, and photovoltaic systems.
     

Why Choose Transistors?

High energy efficiency – essential for energy-saving systems.
Wide compatibility – available in various types suited to specific applications.
Fast switching speed – ideal for impulse and digital circuits.
Versatile applications – from simple control circuits to advanced industrial automation.

 

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Transistor: N-MOSFET; unipolar; 200V; 100A; 18mohm; 625W; POWER MOS 5; -55+150 deg.C; THT; TO247MAX
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Transistor: N-MOSFET; unipolar; 200V; 100A; 18mohm; 625W; POWER MOS 5; -55+150 deg.C; THT; TO264
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Transistor: N-MOSFET; unipolar; 200V; 100A; 20mohm; 568W; POWER MOS 7; -55+150 deg.C; THT; TO247MAX
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Transistor: N-MOSFET; unipolar; 200V; 100A; 22mohm; 520W; POWER MOS 5; -55+150 deg.C; THT; TO264
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Transistor: N-MOSFET; unipolar; 200V; 100A; 22mohm; 520W; POWER MOS 5; -55+150 deg.C; THT; TO264
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Transistor: N-MOSFET; unipolar; 200V; 74A; 34mohm; 403W; POWER MOS 7; -55+150 deg.C; THT; TO247-3
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10+ 83,011
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Transistor: N-MOSFET; unipolar; 200V; 65A; 36mohm; 329W; POWER MOS 7; -55+150 deg.C; THT; TO247
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Transistor: N-MOSFET; unipolar; 200V; 65A; 36mohm; 329W; POWER MOS 7; -55+150 deg.C; THT; TO247-3
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Transistor: N-MOSFET; unipolar; 200V; 67A; 38mohm; 370W; POWER MOS 5; -55+150 deg.C; THT; TO247-3
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Transistor: N-MOSFET; unipolar; 200V; 56A; 45mohm; 300W; POWER MOS 5; -55+150 deg.C; THT; TO247-3
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Transistor: N-MOSFET; unipolar; 200V; 56A; 45mohm; 300W; POWER MOS 5; -55+150 deg.C; SMD; D3PAK
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Transistor: N-MOSFET; unipolar; 800V; 15A; 0.43ohm; 625W; POWER MOS 8; -55+150 deg.C; THT; TO247-3
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Transistor: N-MOSFET; unipolar; 600V; 14A; 0.29ohm; 415W; POWER MOS 8; -55+150 deg.C; THT; TO247-3
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1+ 33,25
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Transistor: N-MOSFET; unipolar; 1200V; 15A; 0.63ohm; 1040W; POWER MOS 8; -55+150 deg.C; THT; TO247MAX
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Transistor: N-MOSFET; unipolar; 1200V; 15A; 0.63ohm; 1040W; POWER MOS 8; -55+150 deg.C; THT; TO264
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Transistor: N-MOSFET; unipolar; 800V; 16A; 390mohm; 625W; POWER MOS 8; -55+150 deg.C; THT; TO247-3
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Transistor; IGBT; 1200V; 33A; 272W; Field Stop; -55+150 deg.C; THT; T-Max
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Transistor; IGBT; 1200V; 33A; 272W; Field Stop; -55+150 deg.C; THT; TO247-3
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Transistor; IGBT; 1200V; 33A; 272W; -55+150 deg.C; SMD; D3PAK
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Transistor; IGBT; 1200V; 33A; 417W; POWER MOS 8, PT; -55+150 deg.C; THT; TO247-3
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Transistor; IGBT; 900V; 36A; 417W; POWER MOS 8, PT; -55+150 deg.C; THT; TO247-3
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Transistor; IGBT; 1200V; 25A; 521W; NPT, POWER MOS 8; -55+150 deg.C; THT; TO247-3
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Transistor; IGBT; 1200V; 25A; 521W; NPT, POWER MOS 8; -55+150 deg.C; THT; TO247-3
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Transistor; IGBT; 1200V; 25A; 521W; NPT, POWER MOS 8; -55+150 deg.C; SMD; D3PAK
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Transistor; IGBT; 1200V; 25A; 521W; NPT, POWER MOS 8; -55+150 deg.C; SMD; D3PAK
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Transistor; IGBT; 1200V; 25A; 347W; Thunderblot IGBT; -55+150 deg.C; THT; TO247-3
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Transistor; IGBT; 600V; 37A; 223W; POWER MOS 8, PT; -55+150 deg.C; THT; TO247-3
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Transistor: N-MOSFET; unipolar; 1200V; 18A; 0.53ohm; 1135W; POWER MOS 8; -55+150 deg.C; THT; TO247MAX
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Transistor: N-MOSFET; unipolar; 1200V; 18A; 0.53ohm; 1135W; POWER MOS 8; -55+150 deg.C; THT; TO264
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