Unipolar

Module; SiC diode/transistor; 1.7kV; 74A; Idm: 200A; 700W; Press-in PCB; SP1

Module; SiC diode/transistor; 1.7kV; 37A; Idm: 100A; 350W; Press-in PCB; SP1

Module; SiC diode/transistor; 1.2kV; 22A; Idm: 55A; 125W; Press-in PCB; SP3F

Module; SiC diode/transistor; 1.2kV; 164A; Idm: 440A; 925W; SP6C

Module; SiC diode/transistor; 1.2kV; 38A; Idm: 100A; 263W; Press-in PCB; SP3F

Transistor: N-MOSFET x2; unipolar; RF; 500V; 10A; 910W; -55+175 deg.C; T3A-8

MOSFETs; DN2540N8-G; MICROCHIP TECHNOLOGY; 170 mA; 400 V; 17 ?; 20 V

Transistor: N-MOSFET; unipolar; 350V; 0.072A; 35ohm; 0.36W; -55+150 deg.C; SMD; SOT23

MOSFETs; LND150N8-G; MICROCHIP TECHNOLOGY; 30 mA; 500 V; 850 ?; 20 V

Transistor: N-MOSFET; unipolar; 700V; 99A; 19mohm; 400W; SiC; -55+175 deg.C; THT; TO247

Transistor: N-MOSFET; unipolar; 700V; 99A; 19mohm; 455W; SiC; -55+175 deg.C; THT; TO247-4

Transistor: N-MOSFET; unipolar; 700V; 89A; 19mohm; 370W; SiC; -55+175 deg.C; SMD; D3PAK