Pin Header; pitch 2.54mm; 1x40 pins; assembly: SMD; male; straight; single row

Pin Header; pitch 2.54mm; 1x20 pins; assembly: SMD male; straight; single row 2-level

Zener Diodes; NEXPERIA; PLVA650A, 215; 3

Zener Diodes; NEXPERIA; PLVA653A, 215; 3; 5.3 V; 3.5 µA; 250 mW

Power Inductors – SMD; BOURNS; PM2110-151K-RC; 150 µH; 49 mOhm; 1 kHz; 10 %

Rugged Tablet 7" WSXGA 1280x800; 400 nits; IP65; oper. temp. -20+50C; Intel Atom N2600 1.6GHz; RAM 2GB DDR3; 32GB SSD MLC; WiFi; Bluetooth; GPS; battery 3000mAh; Windows 7 Pro EN

Fully-Rugged Tablet 7" WSVGA (1024 x 600); resistant to shock and impact; waterproof; dustproof

Power Inductors – SMD; BOURNS; PM3340-221M-RC; 220 µH; 440 mOhm; 100 kHz; 20 %

Common Mode Chokes and Filters; BOURNS; PM3700-80-RC; 11.43 mm; 250 mOhm; 21.9 mm; 21.59 mm

PCI interface integrated circuit; MICROCHIP; PM43052B1-F3EI; South Korea; 2049-07-22; 2021-07-22

Fully-Rugged Tablet 10.1" WUXGA (1920 x 1200); resistant to shock and impact; waterproof; dustproof

Rugged Tablet 10.1" WUXGA 1920x1200; resistant to shock; impact and spill; IP65; oper. temp. -20+50C; Intel Atom E3827 1.75GHz; RAM 4GB DDR3L; 120GB SSD; WiFi; Bluetooth; GPS; USB3.0; USB2.0; LAN; RS-232; mHDMI; mSIM; mSD; bat.4540mAh 6h

Fully-Rugged Tablet 10.4" XGA (1024 x 768); resistant to shock and impact; waterproof; dustproof

Rugged Tablet 10.4" XGA 1024x768; resistant to shock; impact and spill; IP65; oper. temp. -20+50C; Intel Atom E3827 1.75GHz; RAM 4GB DDR3L; 64GB SSD; Windows 8.1 Emb; WiFi; Bluetooth; NFC; USB3.0; USB2.0; LAN; code reader 1D/2D; battery 3800mAh 9h

Integrated Circuits for Network Processors and Controllers; MICROCHIP; PM5450A-FEI; South Korea

Integrated Circuits for Network Processors and Controllers; MICROCHIP; PM5980B-FEI; South Korea, Taiwan

PCI interface integrated circuit; MICROCHIP; PM8531B-F3EI; South Korea; 2044-01-23

Bipolar Junction Transistors - BJT; NEXPERIA; PMBT2222A, 215; NPN; 3

Bipolar Junction Transistors - BJT; NEXPERIA; PMBT3904, 215; NPN; 3

Bipolar Junction Transistors - BJT; NEXPERIA; PMBT3904, 235; NPN; 3; 40 V; 200 mA

Bipolar Junction Transistors - BJT; NEXPERIA; PMBT3906, 215; PNP; 3; -40 V; -200 mA

Bipolar Junction Transistors - BJT; NEXPERIA; PMBT3946YPN, 115; NPN, PNP; 6; 40 V; 200 mA

Bipolar Junction Transistors - BJT; NEXPERIA; PMBT4401, 215; NPN; 3

Bipolar Junction Transistors - BJT; NEXPERIA; PMBT4403, 215; PNP; 3

Bipolar Junction Transistors - BJT; NEXPERIA; PMBT5551, 215; NPN; 3

Bipolar Junction Transistors - BJT; NEXPERIA; PMBTA06, 215; NPN; 3

Bipolar Junction Transistors - BJT; NEXPERIA; PMBTA45, 215; NPN; 3; 500 V; 150 mA

Bipolar Junction Transistors - BJT; NEXPERIA; PMBTA56, 215; PNP; 3; 250 mW

Transistor: PNP-Darlington; bipolar; -30V; -0.5A; 0.25W; -65+150 deg.C; SMD; SOT23

Bipolar Junction Transistors - BJT; NEXPERIA; PMBTA92, 215; PNP; 3; -300 V; -200 mA

Transistor: N-MOSFET; unipolar; 650V; 4A; 2.5ohm; 95W; -55+150 deg.C; SMD; PPAK5X6

MOSFET Devices; NEXPERIA; PMCM6501VNEZ; 12 V; 7.3 A; 15 mOhm

Transistor: N-MOSFET; unipolar; 650V; 4A; 2.6ohm; 42W; -55+150 deg.C; SMD; TO252(DPAK)

Transistor: N-MOSFET; unipolar; 650V; 4A; 2.4ohm; 70W; -55+150 deg.C; SMD; TO252(DPAK)

Transistor: N-MOSFET; unipolar; 700V; 4A; 2.8ohm; 42W; -55+150 deg.C; SMD; TO252(DPAK)

Transistor: N-MOSFET; unipolar; 700V; 4A; 2.7ohm; 70W; -55+150 deg.C; SMD; TO252(DPAK)

Transistor: N-MOSFET; unipolar; 800V; 3.2A; 3.9ohm; 94W; -55+150 deg.C; SMD; TO252(DPAK)

Transistor: N-MOSFET; unipolar; 500V; 5A; 1.5ohm; 52W; -55+150 deg.C; SMD; TO252(DPAK)

Transistor: N-MOSFET; unipolar; 650V; 7A; 1.2ohm; 77W; -55+150 deg.C; SMD; TO252(DPAK)

Transistor: N-MOSFET; unipolar; 650V; 8A; 1.2ohm; 90W; -55+150 deg.C; SMD; TO252(DPAK)

Transistor: N-MOSFET; unipolar; 200V; 9A; 0.24ohm; 44W; -55+150 deg.C; SMD; TO252(DPAK)

Transistor: N-MOSFET; unipolar; 500V; 9A; 0.8ohm; 89W; -55+150 deg.C; SMD; TO252(DPAK)

Transistor: N-MOSFET; unipolar; 200V; 18A; 0.14ohm; 101W; -55+150 deg.C; SMD; TO252(DPAK)

MOSFET Devices; NEXPERIA; PMDPB30XN, 115; 20 V; 4 A; 650 mV; 4 ns

MOSFET Devices; NEXPERIA; PMDT290UNE, 115; 20 V; 800 mA; 8 V; 390 mW

Transistor: N+N-MOSFET; unipolar; 20V; 40A; 0.006ohm; 27W; ESD diode; -55+150 deg.C; SMD; DFN3X3

Transistor: N+N-MOSFET; unipolar; 20V; 20A; 0.0082ohm; 10.8W; ESD diode; -55+150 deg.C; SMD; DFN2X3-6

Rectifiers and Schottky diodes; NEXPERIA; PMEG050V150EPDZ; Surface Mount; 15 A; 50 V

Rectifiers and Schottky diodes; NEXPERIA; PMEG10010ELRX; 1 A; Surface Mount; 150 nA; 1 A

Rectifiers and Schottky diodes; NEXPERIA; PMEG10020AELRX; 2 A; Surface Mount; 70 nA; 2 A