Integrated Circuit Instrumentation Amplifiers; CH:1; 1kHz; 2.7-5.5V; -40+125 deg.C; SMD; VSSOP8

Integrated Circuit Instrumentation Amplifiers; CH:1; 2MHz; ±2.25-18V/4.5-36V; -40+125 deg.C; SMD; SO8

Integrated Circuit Instrumentation Amplifiers; CH:1; 4.7MHz; ±2.25-18V/4.5-36V; -40+125 deg.C; SMD; SO8

Integrated Circuit Instrumentation Amplifiers; CH:1; 1MHz; ±1.5-18V/3-36V ; -40+125 deg.C; SMD; SO8

Integrated Circuit Instrumentation Amplifiers; CH:1; 1MHz; ±1.5-18V/3-36V ; -40+125 deg.C; SMD; VSSOP8

Integrated Circuit Instrumentation Amplifiers; CH:1; 2MHz; ±2.25-18V/4.5-36V; -40+125 deg.C; SMD; SO8

Dysk 2.5" SATA SSD 3SE Innodisk, 16 GB SLC, R/W 420/120 MB/s, temperatura pracy 0-70 st. C, oznaczenie producenta: DES25-16GD06SCAQB

LED Driver; AC/DC converter; PWM dimming; active temperature management ; 2.2-3.6V; -40+85 deg.C; SMD; QFN16

Industrial 1-port Gigabit High Power PoE Injector; operating temperature -20+70 deg.C; DIN rail mountable

Industrial 1-port Gigabit High Power PoE Injector; operating temperature -20+70 deg.C; DIN rail mountable

Industrial 2-port Gigabit High Power PoE Injector; operating temperature -20+70 deg.C; DIN rail mountable

Industrial 2-port Gigabit High Power PoE Injector; operating temperature -20+70 deg.C; DIN rail mountable

Industrial 2-port Gigabit High Power PoE Injector; operating temperature -20+70 deg.C; DIN rail mountable

Industrial 2-port Gigabit High Power PoE Injector; operating temperature -20+70 deg.C; DIN rail mountable

Expansion board LAN-> 2x CANbus 2.0B; oper. temperature: -10+85 deg.C

Expansion board LAN-> 3xUSB/1xHDMI; oper. temperature: -10+85 deg.C

RAM 2GB 1333MHz DDR3L SODIMM 204-pin; INNODISK; operating temperature 0+85C; M3ST-1GMFCLN9-J

RAM 2GB 1333MHz DDR3L SODIMM 204-pin; INNODISK; operating temperature 0+85C

RAM 2GB 1333MHz DDR3L SODIMM 204-pin; INNODISK; operating temperature 0+85C

RAM 8GB 1600MHz DDR3 SODIMM 204-pin; INNODISK; operating temperature 0+85C

RAM; 512MB/1GB/2GB; 533/667/800 MHz; DDR2 SO-DIMM 200 pin; oper. temperature 0+70C or -40+85C

RAM; 512MB/1GB/2GB; 533/667/800 MHz; DDR2 U-DIMM 240 pin; oper. temperature 0+70C or -40+85C

RAM; 2/4 GB; 1333/1600 MHz; DDR3 Mini-DIMM 244 pin; oper. temperature 0+70C

RAM; 1/2/4/8/16 GB; 800/1066/1333/1600 MHz; DDR3 SO-DIMM 204 pin; oper. temperature 0+70C or -40+85C

RAM; 1/2/4/8/16 GB; 1066/1333/1600 MHz; DDR3 U-DIMM 240 pin; oper. temperature 0+70C or -40+85C

RAM; 4/8/16 GB; 2133 MHz; DDR4 SO-DIMM 260 pin; oper. temperature 0+70C

RAM; 4/8/16 GB; 2133 MHz; DDR4 U-DIMM 288 pin; oper. temperature 0+70C

RAM; 4/8/16 GB; 2133 MHz; DDR4 SO-DIMM 260 pin; oper. temperature 0+70C

RAM; 4/8/16 GB; 2133 MHz; DDR4 U-DIMM 288 pin; oper. temperature 0+70C

RAM; 256MB/512MB/1GB; 266/333/400 MHz; DDR SO-DIMM 200 pin; oper. temperature 0+70C or -40+85C

RAM; 256/512MB/1GB; 266/333/400 MHz; DDR U-DIMM 184 pin; oper. temperature 0+70C or -40+85C

RAM; 128/256/512 MB; 100/133 MHz; SDRAM SO-DIMM 144 pin; oper. temperature 0+70C

RAM; 128/256 MB; 100/133 MHz; SDRAM U-DIMM Low Profile 168 pin; oper. temperature 0+70C

Card SD 128/256/512 MB 1/2/4/8/16/32 GB; SLC or MLC; interface 2.0 lub 3.0; oper. temperature 0+70C or -40+85C

Card SD; 1 GB; SLC; interfejs 1.01/2.0; R/W 19/12 Mb/s; oper. temperature 0+70C

Card SD; 1 GB; SLC; interfejs 1.01/2.0; R/W 19/12 Mb/s; oper. temperature -40+85C

8" RISC HMI

ESD protection diodes / TVS diodes; NEXPERIA; IP4220CZ6, 125; 6 V; 6

ESD protection diodes / TVS diodes; NEXPERIA; IP4220CZ6F; 5.5 V; 9 V

EMI Filter Circuits; NEXPERIA; IP4252CZ16-8-TTL, 1; 500 µm; 3.302 mm; SMD/SMT; 1.45 mm

EMI Filter Circuits; NEXPERIA; IP4254CZ16-8-TTL, 1; 558.8 µm; 3.4 mm; Flat; 1.45 mm

ESD protection diodes / TVS diodes; NEXPERIA; IP4283CZ10-TBA, 115; 8 V; 3.8 A; 5.5 V; 6 V

ESD protection diodes / TVS diodes; NEXPERIA; IP4292CZ10-TBR, 115; 4 V; 4 A; 5.5 V; 6 V

MOSFET Devices; INFINEON; IPA60R099P6; 600 V; 37.9 A; 30 V; 34 W

MOSFET Devices; INFINEON; IPA60R125C6; 600 V; 30 A; 20 V; 34 W

MOSFET Devices; INFINEON; IPA60R165CP; 600 V; 21 A; 20 V; 34 W

MOSFET Devices; INFINEON; IPA60R180C7XKSA1; 600 V; 9 A; 29 W; 155 mOhm

MOSFET Devices; INFINEON; IPA60R190C6; 600 V; 20.2 A; 20 V; 34 W

Transistor: N-MOSFET; unipolar; 650V; 10.1A; 0.65ohm; 28W; -40+150 deg.C; THT; TO220F

MOSFET Devices; INFINEON; IPA65R650CEXKSA1; 650 V; 7 A; 28 W