Elementy

ON SEMICONDUCTOR; FDN340P

Tranzystory MOSFET; ON SEMICONDUCTOR; FDP075N15A-F102; 130 A; 20 V; 150 V; 333 W

Tranzystory MOSFET; ON SEMICONDUCTOR; FDP20N50F; 20 A; 30 V; 500 V; 250 W

Tranzystory MOSFET; ON SEMICONDUCTOR; FDP51N25; 51 A; 30 V; 250 V; 320 W

Tranzystory MOSFET; ON SEMICONDUCTOR; FDP52N20; 52 A; 30 V; 200 V; 357 W

Tranzystory MOSFET; ON SEMICONDUCTOR; FDPF18N50; 18 A; 30 V; 500 V; 38.5 W

Tranzystory MOSFET; ON SEMICONDUCTOR; FDS4141; -10.8 A; 20 V; -40 V; 5 W

Tranzystory MOSFET; ON SEMICONDUCTOR; FDS4559; 4.5 A; 20 V; 60 V; 2 W

Tranzystory MOSFET; ON SEMICONDUCTOR; FDS6375; -8 A; 8 V; -20 V; 2.5 W

Tranzystory MOSFET; ON SEMICONDUCTOR; FDS6673BZ; -14.5 A; 25 V; -30 V; 1 W

Tranzystory MOSFET; ON SEMICONDUCTOR; FDS8949; 6 A; 20 V; 40 V; 2 W

Cewki indukcyjne mocy – SMD; MURATA; FDSD0420D-2R2M=P3; 2.2 µH; 47 mOhm; 100 kHz; 20 %

Cewki indukcyjne mocy – SMD; MURATA; FDSD0630-H-6R8M=P3; 6.8 µH; 100 kHz; 20 %; 3 mm

ON SEMICONDUCTOR; FDV305N

Tranzystory MOSFET; ON SEMICONDUCTOR; FDZ371PZ; 8 V; 500 mW; 1.7 W; 124 ns

Bezpieczniki resetowane – PPTC; LITTELFUSE; FEMTOASMDC005F-2; 50 mA; 150 mA; 10 A; 500 mW

Bezpieczniki resetowane – PPTC; LITTELFUSE; FEMTOSMDC005F-2; 50 mA; 150 mA; 40 A; 500 mW

Prostowniki; VISHAY; FEP16HT-E3/45; Through Hole; 16 A; 500 V; Common Cathode

Prostowniki; VISHAY; FEP30JP-E3/45; Through Hole; 30 A; 600 V; Common Cathode

Diody prostownicze i mostki; STMICROELECTRONICS; FERD40H100SG-TR; 3; 40 A; 100 V; 40 A

Moduły IGBT; INFINEON; FF100R12RT4; 10; 1.75 V; 1.2 kV; 555 W

Moduły IGBT; INFINEON; FF1400R12IP4; 2; 1.75 V; 1.2 kV; 7.65 kW

Moduły IGBT; INFINEON; FF200R12KS4; 10; 3.2 V; 1.2 kV; 1.4 kW

Moduły IGBT; INFINEON; FF300R12KS4; 10; 3.2 V; 1.2 kV; 1.95 kW

Moduły IGBT; INFINEON; FF600R12ME4; 10; 1.75 V; 1.2 kV; 4.05 kW

Wielowarstwowe kondensatory ceramiczne MLCC – na taśmie; TDK; FG28X7R1H104KNT06; 100 nF; Radial; 5.5118 mm; 5.0038 mm

Układy MOSFET; PANASONIC; FK3303010L; 30 V; 100 mA; 12 V; 100 ns

ABRACON; FKFSREIHM0.032768-T3

Rezystory drutowe – przelotowe; YAGEO; FKN1WSJR-52-10R; Axial; Wirewound; 8.9916 mm; 1 W

F-RAM; INFINEON; FM24C04B-GTR; 2-Wire, I2C, Serial; 512 B; SOIC; 1 MHz

F-RAM; INFINEON; FM24CL16B-GTR; I2C; 2 kB; 1 MHz; 2.7 V - 3.65 V

F-RAM; INFINEON; FM25CL64B-GTR; SPI; 8 kB; SOIC; 20 MHz

F-RAM; INFINEON; FM25L16B-GTR; SPI; 2 kB; SOIC; 20 MHz

F-RAM; INFINEON; FM25V02A-GTR; SPI; 32 kB; 40 MHz; 2 V - 3.6 V

F-RAM; INFINEON; FM25V20A-GTR; SPI, Serial; 256 kB; SOIC; 40 MHz

F-RAM; INFINEON; FM25W256-GTR; SPI; 32 kB; SOIC; 20 MHz

F-RAM; INFINEON; FM31256-GTR; 2-Wire; 32 kB; SOIC; 2.7 V - 5.5 V

F-RAM; INFINEON; FM33256B-GTR; SOIC; 14

Rezystory warstwowe metalowe – przelotowe; YAGEO; FMP200JR-52-22R; 22 Ohm; 5 %; Axial; Metal Film

Transoptory; ON SEMICONDUCTOR; FOD3182SD; Surface Mount; 720 mg; SMD/SMT; 25 mA

Izolatory cyfrowe; ON SEMICONDUCTOR; FOD814A3SD; 1.2 V; SMD/SMT; 20 mA; 5 kV

Izolatory cyfrowe; ON SEMICONDUCTOR; FOD814ASD; 1.2 V; SMD/SMT; 20 mA; 5 kV

Transoptory; ON SEMICONDUCTOR; FOD817A3SD; Surface Mount; 0 g; SMD/SMT; 50 mA

Transoptory; ON SEMICONDUCTOR; FOD817BSD; Surface Mount; 0 g; SMD/SMT; 20 mA

Izolatory cyfrowe; ON SEMICONDUCTOR; FOD817C300; 1.4 V; DIP; 50 mA; 5 kV

Transoptory; ON SEMICONDUCTOR; FOD817C300W; Through Hole; 0 g; DIP; 50 mA

Izolatory cyfrowe; ON SEMICONDUCTOR; FODM121CR2; 1.3 V; SMD/SMT; 50 mA; 3.75 kV

Izolatory cyfrowe; ON SEMICONDUCTOR; FODM121C; 1.3 V; SMD/SMT; 50 mA; 3.75 kV

Izolatory cyfrowe; ON SEMICONDUCTOR; FODM2705R2; 1.4 V; SMD/SMT; 50 mA; 3.75 kV

Cewki indukcyjne mocy – SMD; EATON; FP0404R1-R065-R; 65 nH; 320 µOhm; 100 kHz; 15 %