Tranzystory

Moduł; dioda SiC/tranzystor; 1.2kV; 138A; Idm: 350A; 745W; Press-in PCB; SP3F

Moduł; dioda SiC/tranzystor; 1.2kV; 71A; Idm: 180A; 395W; Press-in PCB; SP3F

Moduł; dioda SiC/tranzystor; 1.2kV; 44A; Idm: 110A; 245W; Press-in PCB; SP3F

Moduł; dioda SiC/tranzystor; 1.2kV; 202A; Idm: 500A; 1067W; Press-in PCB; SP3F

Moduł; dioda SiC/tranzystor; 1.2kV; 200A; Idm: 500A; 1042W; Press-in PCB; SP6P

Moduł; dioda SiC/tranzystor; 1.2kV; 136A; Idm: 350A; 728W; Press-in PCB; SP6P

Moduł; dioda SiC/tranzystor; 1.2kV; 71A; Idm: 180A; 395W; Press-in PCB; SP3F

Moduł; tranzystor/tranzystor; 700V; 538A; SiC; D3; przykręcany

Moduł; dioda SiC/tranzystor; 700V; 538A; Idm: 1380A; 1882W; SP6C

Moduł; dioda SiC/tranzystor; 700V; 281A; Idm: 700A; 988W; Press-in PCB; SP3F

Moduł; dioda SiC/tranzystor; 700V; 192A; Idm: 482A; 690W; Press-in PCB; SP3F

Moduł; dioda SiC/tranzystor; 700V; 98A; Idm: 250A; 365W; Press-in PCB; SP1F

Moduł; dioda SiC/tranzystor; 700V; 98A; Idm: 250A; 365W; Press-in PCB; SP3F

Moduł; dioda SiC/tranzystor; 700V; 278A; Idm: 700A; 966W; Press-in PCB; SP6P

Moduł; dioda SiC/tranzystor; 700V; 189A; Idm: 476A; 674W; Press-in PCB; SP6P

Moduł; dioda SiC/tranzystor; 700V; 98A; Idm: 250A; 365W; Press-in PCB; SP3F

Moduł; dioda SiC/tranzystor/tyrystor; 700V; 189A; Idm: 476A; 674W; SP4

Moduł; dioda SiC/tranzystor/tyrystor; 700V; 98A; Idm: 250A; 365W; Press-in PCB; SP3F

Tranzystory bipolarne (BJT); MUN5211DW1T1G; ON SEMICONDUCTOR; NPN; 6; 50 V; 100 mA

Tranzystory bipolarne (BJT); MUN5211T1G; ON SEMICONDUCTOR; NPN; 3; 50 V; 100 mA

Tranzystory bipolarne (BJT); MUN5213DW1T1G; ON SEMICONDUCTOR; NPN; 6; 50 V; 100 mA

Tranzystory bipolarne (BJT); MUN5214DW1T1G; ON SEMICONDUCTOR; NPN; 6; 50 V; 100 mA

Tranzystory bipolarne (BJT); MUN5232DW1T1G; ON SEMICONDUCTOR; NPN; 6; 50 V; 100 mA

Tranzystory bipolarne (BJT); MUN5233DW1T1G; ON SEMICONDUCTOR; NPN; 50 V; 100 mA; 6

Tranzystory bipolarne (BJT); MUN5311DW1T1G; ON SEMICONDUCTOR; NPN, PNP; 6; 50 V; 100 mA

Tranzystory bipolarne (BJT); NCV1413BDR2G; ON SEMICONDUCTOR; NPN; 16; 50 V; 500 mA

Układ scalony; Przetwornik LIN; Vin: 5-18V; Vout: 2V; -40+125st.C; SMD; DFN8; AEC-Q100

Tranzystor N-MOSFET; ; 42V; 2A; 200mOhm;1.7W; -40+150C; SOT-223-3

Tranzystory MOSFET; NDC7001C; ON SEMICONDUCTOR; 510 mA; 2 ?; 960 mW; 2

Tranzystory MOSFET; NDC7002N; ON SEMICONDUCTOR; 50 V; 510 mA; 20 V; 960 mW

Tranzystor: N-MOSFET; bipolarny; 600V; 2.2A; 57W; -55+150 st.C; SMD; IPAK

Tranzystor: N-MOSFET; unipolarny; 600V; 7.1A; 1.2ohm; 35W; -55+150 st.C; THT; TO220

Tranzystory MOSFET; NDFP03N150CG; ON SEMICONDUCTOR; 2.5 A; 1.5 kV; 8 ?; 30 V

Tranzystory MOSFET; NDS0605; ON SEMICONDUCTOR; 180 mA; 5 ?; -60 V; 360 mW

Tranzystory MOSFET; NDS0610; ON SEMICONDUCTOR; 120 mA; 10 ?; -60 V; 360 mW

Tranzystory MOSFET; NDS332P; ON SEMICONDUCTOR; 1 A; -20 V; 300 m?

Tranzystory MOSFET; NDS352AP-NL; VBSEMI

Tranzystory MOSFET; NDS352AP; ON SEMICONDUCTOR; -30 V; 900 mA; 20 V; 460 mW

Tranzystory MOSFET; NDS355AN; ON SEMICONDUCTOR; 1.7 A; 85 m?; 30 V; 20 V

Tranzystor: N-MOSFET; unipolarny; 30V; 6.5A; 0.030ohm; 1.7W; -55+150 st.C; SMD; SOT23

Tranzystory MOSFET; NDS356AP; ON SEMICONDUCTOR; 1.1 A; 200 m?; -30 V; 500 mW

Tranzystor: N-MOSFET; unipolarny; 60V; 0.28A; 2ohm; 300mW; -65+150 st.C; SMD; SOT23

Tranzystory MOSFET; NDS7002A-NL; VBSEMI

Tranzystory MOSFET; NDS7002A; ON SEMICONDUCTOR; 60 V; 280 mA; 20 V; 300 mW

Tranzystor: P-MOSFET; unipolarny; -60V; -8A; 0,050ohm; 5W; -55+150 st.C; SMD; SO8

Tranzystor: P-MOSFET; unipolarny; -60V; -2.5A; 0.3ohm; 3W; -55+150 st.C; SMD; SOT223

Tranzystory MOSFET; NDT2955; ON SEMICONDUCTOR; 2.5 A; 300 m?; 3 W; 1

Tranzystor: P-MOSFET; unipolarny; -60V; -7A; 0.055ohm; 10.4W; -55+150 st.C; SMD; SOT223

Tranzystory MOSFET; NDT3055L; ON SEMICONDUCTOR; 4 A; 60 V; 100 m?; 20 V

Tranzystory MOSFET; NDT451AN; ON SEMICONDUCTOR; 30 V; 7.2 A; 20 V; 1.1 W