Tranzystory

Moduł; pojedynczy tranzystor; 500V; 371A; 5kW; Idm: 1988A; SP6C; przykręcany

Moduł; dioda/tranzystor; 500V; 250A; Idm: 1340A; 3.29kW; Ugs: +-30V; SP6C

Moduł; tranzystor/tranzystor; 600V; 30A; 390W; Press-in PCB; SP1

Moduł; tranzystor/tranzystor; 600V; 15A; 208W; Press-in PCB; SP1

Moduł; dioda SiC/tranzystor; 1.2kV; 190A; Idm: 550A; 1.1kW; D3

Moduł; dioda SiC/tranzystor; 1.2kV; 220A; Idm: 590A; 1.25kW; Press-in PCB; SP3F

Moduł; dioda SiC/tranzystor; 1.2kV; 165A; Idm: 440A; 925W; Press-in PCB; SP3F

Moduł; dioda SiC/tranzystor; 1.2kV; 98A; Idm: 262A; 625W; D3

Moduł; dioda SiC/tranzystor; 1.2kV; 108A; Idm: 280A; 600W; Press-in PCB; SP1

Moduł; dioda SiC/tranzystor; 1.2kV; 90A; Idm: 220A; 600W; Press-in PCB; SP3F

Moduł; dioda SiC/tranzystor; 1.2kV; 42A; Idm: 110A; 250W; Press-in PCB; SP1

Moduł; dioda SiC/tranzystor; 1.2kV; 116A; Idm: 300A; 750W; Press-in PCB; SP3F

Moduł; dioda SiC/tranzystor; wspólny emiter; 1.2kV; 20A; Idm: 55A; 125W; Press-in PCB; SP3F

Moduł; dioda SiC/tranzystor; wspólny emiter; 1.2kV; 55A; Idm: 140A; 375W; Press-in PCB; SP3F

Moduł; dioda SiC/tranzystor; 1.2kV; 165A; Idm: 440A; 925W; Press-in PCB; SP6P

Moduł; dioda SiC/tranzystor; 1.2kV; 110A; Idm: 300A; 625W; Press-in PCB; SP6P

Moduł; dioda SiC/tranzystor; 1.2kV; 58A; Idm: 155A; 370W; Press-in PCB; SP6P

Moduł; dioda SiC/tranzystor; 1.2kV; 58A; Idm: 150A; 375W; Press-in PCB; SP3F

Moduł; dioda SiC/tranzystor; 1.7kV; 74A; Idm: 200A; 700W; Press-in PCB; SP1

Moduł; dioda SiC/tranzystor; 1.7kV; 37A; Idm: 100A; 350W; Press-in PCB; SP1

Moduł; dioda SiC/tranzystor; 1.2kV; 22A; Idm: 55A; 125W; Press-in PCB; SP3F

Moduł; dioda SiC/tranzystor; 1.2kV; 164A; Idm: 440A; 925W; SP6C

Moduł; dioda SiC/tranzystor; 1.2kV; 38A; Idm: 100A; 263W; Press-in PCB; SP3F

Tranzystor: N-MOSFET x2; unipolarny; RF; 500V; 10A; 910W; -55+175 st.C; T3A-8

Tranzystory MOSFET; AUIRFR9024NTRPBF; VBSEMI

Dyskretne tranzystory IGBT; AUIRG4PH50S; INFINEON TECHNOLOGIES; 57 A; 1.2 kV; 200 W; 3

Tranzystory MOSFET; AUIRLR024NTRPBF; VBSEMI

Tranzystory MOSFET; AUIRLR3110ZTRPBF-VB; VBSEMI

Tranzystor: PNP; bipolarny; -30V; -3A; 1.25W; -55+150 st.C; THT; TO126

Tranzystor: PNP; bipolarny; -30V; -3A; -55+150 st.C; SMD; SOT89

Tranzystor: PNP; bipolarny; -30V; -3A; 1.25W; -55+150 st.C; SMD; TO252-2L

Tranzystor: PNP; bipolarny; -30V; -3A; 0.625W; -55+150 st.C; THT; TO92

Tranzystor: PNP; bipolarny; -30V; -3A; 1.25W; -55+150 st.C; SMD; SOT223

Tranzystor: PNP; bipolarny; -30V; -3A; 0.5W; -55+150 st.C; SMD; SOT89-3L

Tranzystor: PNP; bipolarny; -50V; -0.1A; 0.35W; -55+150 st.C; THT; TO92

Tranzystor: NPN; bipolarny; 45V; 0.1A; 0.35W; -55+150 st.C; THT; TO92

Tranzystor: NPN; bipolarny; 25V; 0.1A; 0.35W; -55+150 st.C; THT; TO92

Tranzystor: PNP; bipolarny; -45V; -0.1A; 0.5W; -55+150 st.C; THT; TO92

Tranzystor: PNP; bipolarny; 45V; 0.1A; -55+150 st.C; THT; TO92

Tranzystor: PNP; bipolarny; -25V; -0.1A; 0.5W; -55+150 st.C; THT; TO92

Tranzystor: PNP; bipolarny; -25V; -0.1A; 0.5W; -55+150 st.C; THT; TO92

Tranzystor: PNP; bipolarny; -45V; -0.8A; 625mW; -55+150 st.C; THT; TO92

Tranzystory bipolarne (BJT); BC32725TA; ON SEMICONDUCTOR; PNP; 45 V; 800 mA; 3

Tranzystor: PNP; bipolarny; -45V; -0.8A; 625mW; -55+150 st.C; THT; TO92

Tranzystor: PNP; bipolarny; -45V; -0.8A; 0.625W; -55+150 st.C; THT; TO92

Tranzystor: PNP; bipolarny; 45V; 0.8A; -55+150 st.C; THT; TO92

Tranzystor: PNP; bipolarny; -25V; -0.8A; 0.625W; -55+150 st.C; THT; TO92

Tranzystor: NPN; bipolarny; 45V; 0.8A; 625mW; -55+150 st.C; THT; TO92

Tranzystory bipolarne (BJT); BC33725TA; ON SEMICONDUCTOR; NPN; 3; 45 V; 800 mA

Tranzystor: NPN; bipolarny; 45V; 0.8A; 625mW; -55+150 st.C; THT; TO92