Tranzystory

Tranzystory MOSFET; FDS6375-NL; VBSEMI

Tranzystory MOSFET; FDS6375; ON SEMICONDUCTOR; -20 V; -8 A; 8 V; 2.5 W

Tranzystory MOSFET; FDS6673BZ-NL; VBSEMI

Tranzystory MOSFET; FDS6673BZ; ON SEMICONDUCTOR; -30 V; -14.5 A; 25 V; 1 W

Tranzystory MOSFET; FDS6675BZ; ON SEMICONDUCTOR; 11 A; 30 V; 13 m?; 25 V

Tranzystory MOSFET; FDS6679AZ; ON SEMICONDUCTOR; 13 A; 9.3 m?; -30 V; 25 V

Tranzystory MOSFET; FDS6898A; ON SEMICONDUCTOR; 9.4 A; 14 m?; 20 V; 12 V

Tranzystory MOSFET; FDS86242; ON SEMICONDUCTOR; 4.1 A; 67 m?; 150 V; 20 V

Tranzystory MOSFET; FDS8949-NL; VBSEMI

Tranzystory MOSFET; FDS8949; ON SEMICONDUCTOR; 40 V; 6 A; 20 V; 2 W

Tranzystory MOSFET; FDS9926A; ON SEMICONDUCTOR; 6.5 A; 20 V; 30 m?; 10 V

Tranzystory MOSFET; FDS9945; ON SEMICONDUCTOR; 3.5 A; 60 V; 100 m?; 20 V

Tranzystory MOSFET; FDT86113LZ; ON SEMICONDUCTOR; 3.3 A; 100 V; 100 m?; 20 V

Tranzystory MOSFET; FDV301N; ON SEMICONDUCTOR; 220 mA; 25 V; 5 ?; 8 V

Tranzystory MOSFET; FDV303N; ON SEMICONDUCTOR; 680 mA; 450 m?; 25 V; 8 V

Tranzystor: P-MOSFET; unipolarny; -25V; -0.46A; 0.054ohm; 0.35W; -55+150 st.C; SMD; SOT23

Tranzystory MOSFET; FDV304P-NL; VBSEMI

Tranzystory MOSFET; FDV304P; ON SEMICONDUCTOR; -25 V; -460 mA; -8 V; 350 mW

Tranzystor: P-MOSFET; unipolarny; -20V; -5A; 0.043ohm; 2.5W; -55+150 st.C; SMD; SOT23

Tranzystory MOSFET; FDV305N-NL; VBSEMI

Tranzystory MOSFET; FDV305N; ON SEMICONDUCTOR; 20 V; 900 mA; 12 V; 350 mW

Tranzystory MOSFET; FDZ371PZ; ON SEMICONDUCTOR; 8 V; 1.7 W

Moduły IGBT; FF100R12RT4; INFINEON TECHNOLOGIES; 1.2 kV; 555 W; 1.75 V; 10

Moduły IGBT; FF150R12RT4; INFINEON TECHNOLOGIES; 1.2 kV; 790 W; 1.75 V; 10

Moduły IGBT; FF200R12KT4; INFINEON TECHNOLOGIES; 1.2 kV; 1.1 kW; 1.75 V; 10

Moduły IGBT; FF225R12ME4; INFINEON TECHNOLOGIES; 10; 1.2 kV; 2.15 V; Not Halogen Free

Moduły IGBT; FF600R17ME4; INFINEON TECHNOLOGIES; 10; 1.7 kV; 1.95 V; Not Halogen Free

Moduły IGBT; FF75R12RT4; INFINEON TECHNOLOGIES; 10; 1.2 kV; 2.15 V; Not Halogen Free

Dyskretne tranzystory IGBT; FGA40N65SMD; ON SEMICONDUCTOR; 80 A; 650 V; 349 W; 3

Dyskretne tranzystory IGBT; FGB20N60SFD; ON SEMICONDUCTOR; 40 A; 600 V; 208 W; 3

Dyskretne tranzystory IGBT; FGH40N60SMD; ON SEMICONDUCTOR; 80 A; 600 V; 349 W; 3

Dyskretne tranzystory IGBT; FGH40N60UFDTU; ON SEMICONDUCTOR; 600 V; 80 A; 290 W; 600 V

Moduły IGBT; FGH40T120SMD; ON SEMICONDUCTOR; 1.2 kV; 1.8 V; 24.75 mm

Dyskretne tranzystory IGBT; FGH50T65SQD-F155; ON SEMICONDUCTOR

Dyskretne tranzystory IGBT; FGH60N60SMD; ON SEMICONDUCTOR; 120 A; 600 V; 600 W; 3

Dyskretne tranzystory IGBT; FGH60T65SQD-F155; ON SEMICONDUCTOR; 650 V; 120 A; 333 W

Dyskretne tranzystory IGBT; FGH75T65SHD-F155; ON SEMICONDUCTOR; 650 V; 150 A; 455 W; 650 V

Dyskretne tranzystory IGBT; FGL60N100BNTDTU; ON SEMICONDUCTOR; 60 A; 1 kV; 180 W; 3

Tranzystory bipolarne (BJT); FJL6920TU; ON SEMICONDUCTOR; NPN; 3; 800 V; 30 A

Tranzystor: N+N-MOSFET; unipolarny; 20V; 6A; 0.025ohm; 1.5W; -55+150 st.C; SMD; TSSOP8

Tranzystory bipolarne (BJT); FMB3906; ON SEMICONDUCTOR; PNP; 6; -40 V; -200 mA

Tranzystor: NPN; bipolarny; 25V; 0.2A; 0.33W; -55+150 st.C; SMD; SOT23

Tranzystory bipolarne (BJT); FMMT413TD; DIODES; NPN; 3; 50 V; 100 mA

Tranzystor: NPN; bipolarny; 30V; 1A; 0.2W; -55+150 st.C; SMD; SOT23

Tranzystory bipolarne (BJT); FMMT451TA; DIODES; NPN; 3; 60 V; 1 A

Tranzystory bipolarne (BJT); FMMT458TA; DIODES; NPN; 3; 400 V; 225 mA

Tranzystory bipolarne (BJT); FMMT491ATA; DIODES; NPN; 3; 40 V; 1 A

Tranzystor: NPN; bipolarny; 60V; 1A; 0.25W; -55+150 st.C; SMD; SOT23

Tranzystory bipolarne (BJT); FMMT491QTA; DIODES; 60 V; 1 A

Tranzystory bipolarne (BJT); FMMT491TA; DIODES; NPN; 3; 60 V; 1 A