Unipolarne

Tranzystory JFET; JFE2140DR; TEXAS INSTRUMENTS; 8; SOIC; 1.75 mm

Tranzystory MOSFET; LBSS123LT1G-VB; VBSEMI

Tranzystory MOSFET; LBSS138LT1G; VBSEMI; 200 mA; 20 V

Tranzystor; N--Channel Power MOSFET; 650V; 10A; -55+150 st.C; TO220F

Tranzystory MOSFET; LM317K TO-263 T/R; UTC

Tranzystory MOSFET; LND150N8-G; MICROCHIP TECHNOLOGY; 30 mA; 500 V; 850 ?; 20 V

Tranzystory MOSFET; MCH6321-TL-E; ON SEMICONDUCTOR; 4 A; 83 m?; 20 V; 10 V

Tranzystory MOSFET; MCH6321-TL-W; ON SEMICONDUCTOR; 20 V; 4 A; 10 V; 1.5 W

Tranzystor: P-MOSFET; unipolarny; -100V; -18A ;110mohm; 70W; -55+150 st.C; SMD; DPAK-3 (TO-252-3)

Tranzystory MOSFET; MGSF1N02LT1G; ON SEMICONDUCTOR; 750 mA; 90 m?; 225 mW; 1

Tranzystory MOSFET; MGSF1N03LT1G; ON SEMICONDUCTOR; 30 V; 1.6 A; 20 V; 730 mW

Tranzystory MOSFET; MMBF170-7-F; DIODES; 60 V; 500 mA; 20 V; 300 mW

Tranzystory MOSFET; MMBF170LT1G; ON SEMICONDUCTOR; 60 V; 500 mA; 20 V; 225 mW

Tranzystor: N-MOSFET; unipolarny; 60V; 250mA; 3.3ohm;0.3W; -55+150 st.C; SMD; SOT23

Tranzystory MOSFET; MMBF170; ON SEMICONDUCTOR; 60 V; 500 mA; 20 V; 300 mW

Tranzystory MOSFET; MMBF2201NT1G; ON SEMICONDUCTOR; 300 mA; 1 ?; 20 V; 150 mW

Tranzystory JFET; MMBF4117; ON SEMICONDUCTOR; SOT-23; 3; 930 µm; 40 V

Tranzystory JFET; MMBF4393LT1G; ON SEMICONDUCTOR; 3; SOT-23-3; 1.016 mm; 30 V

Tranzystory MOSFET; MMBF5484; ON SEMICONDUCTOR; 5 mA; -25 V; 225 mW

Tranzystory JFET; MMBFJ108; ON SEMICONDUCTOR; 3; SOT-23; 1.22 mm; 25 V

Tranzystory JFET; MMBFJ111; ON SEMICONDUCTOR; 1.3 mm; -35 V; 350 mW; Single

Tranzystory JFET; MMBFJ112; ON SEMICONDUCTOR; 3; SOT-23; 1.11 mm; 35 V

Tranzystory JFET; MMBFJ113; ON SEMICONDUCTOR; 1.3 mm; -35 V; 350 mW; Single

Tranzystory JFET; MMBFJ175LT1G; ON SEMICONDUCTOR; 1.4 mm; 25 V; 225 mW; Single

Tranzystory JFET; MMBFJ176; ON SEMICONDUCTOR; 1.11 mm; SOT-23; 3; 225 mW

Tranzystory JFET; MMBFJ177LT1G; ON SEMICONDUCTOR; 1.4 mm; 25 V; 225 mW; Single

Tranzystor: N-JFET; unipolarny;-40V; 200µA ;0.35W; -55+150 st.C; SMD; SOT23;

Tranzystory JFET; MMBFJ201; ON SEMICONDUCTOR; 1.3 mm; -40 V; 350 mW; Single

Tranzystory JFET; MMBFJ202; ON SEMICONDUCTOR; SOT-23; 3; 1.11 mm; 40 V

Tranzystory JFET; MMBFJ270; ON SEMICONDUCTOR; 1.3 mm; 30 V; 225 mW; Single

Tranzystory MOSFET; MMBT7002DW; DIOTEC SEMICONDUCTOR

Tranzystory MOSFET; MMBT7002K-AQ; DIOTEC SEMICONDUCTOR

Tranzystor: N-MOSFET; unipolarny; 60V; 0,3A; 3ohm; 0,35W; -55+150 st.C; SMD; SOT23

Tranzystory MOSFET; MMBT7002K; DIOTEC SEMICONDUCTOR; 115 mA; 60 V; 3 ?

Tranzystory MOSFET; MMBT7002KW-AQ; DIOTEC SEMICONDUCTOR; 300 mA; 3 ?

Tranzystory MOSFET; MMFTN138-Q; DIOTEC SEMICONDUCTOR

Tranzystory MOSFET; MMFTN138; DIOTEC SEMICONDUCTOR; 220 mA; 6 ?

Tranzystory MOSFET; MMFTN210A-Q; DIOTEC SEMICONDUCTOR

Tranzystor MOSFET; Kanał typu N; 60V; 3A; -55+150st. C; SOT-23

Tranzystory MOSFET; MRF101AN; NXP SEMICONDUCTORS

Tranzystor MOSFET; kanał N; 50V; RF; -40+150 st.C; THT; TO247-3

Tranzystor: N-MOSFET; unipolarny; 700V; 99A; 19mohm; 400W; SiC; -55+175 st.C; THT; TO247

Tranzystor: N-MOSFET; unipolarny; 700V; 99A; 19mohm; 455W; SiC; -55+175 st.C; THT; TO247-4

Tranzystor: N-MOSFET; unipolarny; 700V; 89A; 19mohm; 370W; SiC; -55+175 st.C; SMD; D3PAK

Tranzystor: N-MOSFET; unipolarny; 1200V; 80A; 22mohm; 455W; SiC; -55+175 st.C; THT; TO247-3

Tranzystor: N-MOSFET; unipolarny; 1200V; 80A; 22mohm; 455W; SiC; -55+175 st.C; THT; TO247-4

Tranzystor: N-MOSFET; unipolarny; 1200V; 73A; 31mohm; 500W; SiC; -55+175 st.C; THT; TO247-3

Tranzystor: N-MOSFET; unipolarny; 1200V; 73A; 31mohm; 500W; SiC; -55+175 st.C; THT; TO247-4

Moduł; pojedynczy tranzystor; 1.2kV; 54A; 278W; Idm: 275A; SOT227B; przykręcany

Tranzystor: N-MOSFET; unipolarny; 1200V; 63A; 31mohm; 370W; SiC; -55+175 st.C; SMD; D3PAK