Memories

Integrated Circuit, FLASH memory; 2GB; 120MHZ; Vin 1.7-2V; -40+85stC; WSON8

Integrated Circuit, FLASH memory; 2GB; 120MHZ; Vin 1.7-2V; -40+105stC; WSON8

Flash Memory; GD5F4GQ4RBYIGR; GIGADEVICE

Memory NAND FLASH; 8Gb; 133MHZ; 2.7-3.6V; -40+85stC; WSON8

FLASH Memory; FLASH Memory; 1 Gbit; 128Mx8bit; Parallel;1.7V-1.95V;30MA; -40+85 st.C;FBGA-63

NandFlash;Parallerl;8GB; 128 M x 8;2.7v ~ 3.6v;30 mA; Industrial(-40 C to +85 C);TSOPI-48

FLASH NAND Memory; I/O VCCQ; 2.7V-3.6V; 8Gb; -40+85 deg.C; TSOPI-48

Flash Memory; GDQ2A8AA-CQ; GIGADEVICE

FLASH Memory; 128Mb; 16M x 8bit; SPI; 200MHz; 1.7-2V; -40+125deg.C; SMD; TFBGA24

SDRAM Memory ; 256Mbit; 4Mx16bitx4; 166MHz; 3.3V; 0+70 deg.C; SMD; TSOP-II-54

EEPROM (Electrically Erasable PROM); M24128-BFMC6TG; STMICROELECTRONICS; 1.7 V; Serial; EEPROM; 5.5 V

EEPROM (Electrically Erasable PROM); M24128-BRMN6TP; STMICROELECTRONICS; 1.8 V; Serial; EEPROM; 5.5 V