Transistor: P-MOSFET; unipolar; -40V; -90A; 2.8ohm; 136W; -55+175 deg.C; SMD; TO252(DPAK)

Transistor: P-MOSFET; unipolar; -40V; -50A; 0.012ohm; 3W; -55+175 deg.C; SMD; TO252(DPAK)

Transistor: P-MOSFET; unipolar; -60V; -7A; 0.028ohm; 2W; -55+150 deg.C; SMD; SOT223

Transistor: N-MOSFET; unipolar; 60V; 100A; 0.002ohm; 167W; -55+150 deg.C; SMD; PowerDI5060-8

Adapter for through terminal blocks; grey; Number of rows 2; spacing 5mm

Adapter for through terminal blocks; grey; Number of rows 3; spacing 5mm

MOSFET Devices; MICROCHIP; DN2540N8-G; 400 V; 170 mA; 20 V; 1.6 W

Insulated winding wire; with two layers of enamel insulation; diameter 0.15mm; SWG 38; -65+200 deg.C; 1600m; 250g.

Insulated winding wire; with two layers of enamel insulation; diameter 0.20mm; SWG 36; -65+200 deg.C; 854m; 250g.

Insulated winding wire; with two layers of enamel insulation; diameter 0.30mm; SWG 31; -65+200 deg.C; 403m; 250g.

Insulated winding wire; with two layers of enamel insulation; diameter 0.40mm; SWG 27; -65+200 deg.C; 220m; 250g.

Insulated winding wire; with two layers of enamel insulation; diameter 0.50mm; SWG 25; -65+200 deg.C; 140m; 250g.