Transistor: N-MOSFET; unipolar; 500V; 53A; 65mohm; 1135W; POWER MOS 8; -55+150 deg.C; THT; TO264

Transistor; IGBT; 1200V; 85A; 962W; NPT Ultra Fast IGBT; -55+150 deg.C; THT; TO247-3

Transistor; IGBT; 1200V; 85A; 962W; NPT, POWER MOS 8; -55+150 deg.C; THT; TO264

Rectifying Diode; 600V; 8A; -55+175 deg.C; THT; TO220-2

Transistor: N-MOSFET; unipolar; 1000V; 5A; 1.8ohm; 290W; POWER MOS 8; -55+150 deg.C; THT; TO247-3

Transistor: N-MOSFET; unipolar; 600V; 94A; 35mohm; 833W; CoolMOS; -55+150 deg.C; THT; TO264MAX

Transistor: N-MOSFET; unipolar; 650V; 61A; 35mohm; 833W; CoolMOS; -55+150 deg.C; THT; TO247MAX

Transistor; IGBT; 650V; 100A; 892W; NPT, POWER MOS 8; -55+150 deg.C; THT; T-Max

Transistor: N-MOSFET; unipolar; 1000V; 5A; 1.6ohm; 337W; POWER MOS 8; -55+150 deg.C; THT; TO247-3

Transistor: N-MOSFET; unipolar; 1000V; 6A; 1.4ohm; 335W; POWER MOS 8; -55+150 deg.C; THT; TO247-3

Transistor: N-MOSFET; unipolar; 1000V; 6A; 1.4ohm; 335W; POWER MOS 8; -55+150 deg.C; SMD; D3PAK

Moduł: diodowy; podwójna,wspólna katoda; 1200V; 400A; screw; SP6C