Tranzystory

Tranzystor: NPN; bipolarny; 100V; 1A; 0.25W; -55+150 st.C; SMD; SOT23

Tranzystory bipolarne (BJT); FMMT493TA; DIODES; NPN; 3; 100 V; 1 A

Tranzystor: NPN; bipolarny; 150V; 1A; 0.25W; -55+150 st.C; SMD; SOT23

Tranzystory bipolarne (BJT); FMMT497TA; DIODES; NPN; 300 V; 500 mA; 3

Tranzystory bipolarne (BJT); FMMT558TA; DIODES; PNP; 400 V; 150 mA; 3

Tranzystory bipolarne (BJT); FMMT560QTA; DIODES; 500 V; 150 mA; 3

Tranzystor: PNP; bipolarny; -60V; -1A; 0.25W; -55+150 st.C; SMD; SOT23

Tranzystory bipolarne (BJT); FMMT591TA; DIODES; PNP; 3; 60 V; 1 A

Tranzystor: PNP; bipolarny; -100V; -1A; 0.25W; -55+150 st.C; SMD; SOT23

Tranzystor: PNP; bipolarny; -100V; -1A; 0.25W; -55+150 st.C; SMD; SOT23

Tranzystory bipolarne (BJT); FMMT597TA; DIODES; PNP; 3; 300 V; 200 mA

Tranzystor: NPN; bipolarny; 20V; 2.5A; 0.35W; -55+150 st.C; SMD; SOT23

Tranzystory bipolarne (BJT); FMMT618TA; DIODES; NPN; 3; 20 V; 2.5 A

Tranzystor: NPN; bipolarny; 50V; 2A; 0.35W; -55+150 st.C; SMD; SOT23

Tranzystory bipolarne (BJT); FMMT619TA; DIODES; NPN; 3; 50 V; 2 A

Tranzystory bipolarne (BJT); FMMT624TA; DIODES; NPN; 3; 125 V; 1 A

Tranzystory bipolarne (BJT); FMMT717TA; DIODES; PNP; 3; 12 V; 2.5 A

Tranzystor: PNP; bipolarny; -20V; -1.5A; 0.35W; -55+150 st.C; SMD; SOT23

Tranzystory bipolarne (BJT); FMMT718TA; DIODES; PNP; 3; 20 V; 1.5 A

Tranzystor: PNP; bipolarny; -40V; -1.5A; 0.35W; -55+150 st.C; SMD; SOT23

Tranzystory bipolarne (BJT); FMMT720TA; DIODES; PNP; 40 V; 1.5 A; 3

Tranzystory bipolarne (BJT); FMMT723TA; DIODES; PNP; 100 V; 1 A; 3

Moduły IGBT; FNA27560; ON SEMICONDUCTOR; 2.1 V

Moduły IGBT; FP200R12N3T7; INFINEON TECHNOLOGIES; 1.2 kV; 1.55 V

Moduły IGBT; FP75R12KT4; INFINEON TECHNOLOGIES; 1.2 kV; 385 W; 2.15 V; 10

Tranzystory MOSFET; FQA11N90-F109; ON SEMICONDUCTOR; 11.4 A; 960 m?; 900 V; 30 V

Tranzystory MOSFET; FQA13N80-F109; ON SEMICONDUCTOR; 12.6 A; 750 m?; 800 V; 30 V

Tranzystory MOSFET; FQA36P15; ON SEMICONDUCTOR; 36 A; 90 m?; -150 V; 30 V

Tranzystory MOSFET; FQA40N25; ON SEMICONDUCTOR; 250 V; 40 A; 30 V; 280 W

Tranzystory MOSFET; FQA70N10; ON SEMICONDUCTOR; 100 V; 70 A; 25 V; 214 W

Tranzystory MOSFET; FQB19N20LTM; ON SEMICONDUCTOR; 200 V; 21 A; 20 V; 3.13 W

Tranzystory MOSFET; FQB5N90TM; ON SEMICONDUCTOR; 900 V; 5.4 A; 30 V; 3.13 W

Tranzystory MOSFET; FQD11P06TM; VBSEMI; -60 V; -9.4 A; 30 V; 2.5 W

Tranzystory MOSFET; FQD12N20LTM; ON SEMICONDUCTOR; 9 A; 320 m?; 200 V; 20 V

Tranzystory MOSFET; FQD13N06LTM; ON SEMICONDUCTOR; 60 V; 11 A; 20 V; 2.5 W

Tranzystory MOSFET; FQD13N10LTM; ON SEMICONDUCTOR; 100 V; 10 A; 20 V; 2.5 W

Tranzystory MOSFET; FQD13N10LTM-VB; VBSEMI

Tranzystory MOSFET; FQD16N25CTM; ON SEMICONDUCTOR; 250 V; 16 A; 30 V; 160 W

Tranzystory MOSFET; FQD19N10LTM; ON SEMICONDUCTOR; 15.6 A; 110 m?; 50 W; 1

Tranzystory MOSFET; FQD2N100TM; ON SEMICONDUCTOR; 1.6 A; 9 ?; 1 kV; 30 V

FQD2N60CTM tranzystor MOSFET, kanał typu N, 600V, 1.9A, 3.6ohm, TO-252AA

Tranzystory MOSFET; FQD2N60CTM; ON SEMICONDUCTOR; 1.9 A; 4.7 ?; 44 W; 1

Tranzystory MOSFET; FQD2N90TM; ON SEMICONDUCTOR; 900 V; 1.7 A; 30 V; 2.5 W

Tranzystory MOSFET; FQD3P50TM; ON SEMICONDUCTOR; -500 V; -2.1 A; 30 V; 2.5 W

Tranzystory MOSFET; FQD5N60CTM; ON SEMICONDUCTOR; 600 V; 2.8 A; 30 V; 2.5 W

Tranzystory MOSFET; FQD6N40CTM; ON SEMICONDUCTOR; 4.5 A; 1 ?; 400 V; 48 W

Tranzystory MOSFET; FQD7P20TM; ON SEMICONDUCTOR; -200 V; -5.7 A; 30 V; 2.5 W

Tranzystory MOSFET; FQD8P10TM-F085; ON SEMICONDUCTOR; -6.6 A; -100 V; 30 V; 2.5 W

Tranzystory MOSFET; FQD8P10TM; ON SEMICONDUCTOR; -100 V; -6.6 A; 30 V; 2.5 W

Tranzystory MOSFET; FQN1N60CTA; ON SEMICONDUCTOR; 300 mA; 600 V; 11.5 ?; 30 V

Tranzystory MOSFET; FQP19N20C; ON SEMICONDUCTOR; 200 V; 19 A; 30 V; 139 W

Tranzystory MOSFET; FQP4N90C; ON SEMICONDUCTOR; 900 V; 4 A; 30 V; 140 W

Tranzystory MOSFET; FQP4N90C-VB; VBSEMI

Tranzystory MOSFET; FQP6N90C; ON SEMICONDUCTOR; 6 A; 900 V; 2.3 ?; 30 V

Tranzystory MOSFET; FQPF4N90C; ON SEMICONDUCTOR; 900 V; 4 A; 30 V; 47 W

Tranzystory MOSFET; FQPF6N80C; ON SEMICONDUCTOR; 800 V; 5.5 A; 30 V; 51 W

Tranzystory MOSFET; FQPF7N80C; ON SEMICONDUCTOR; 6.6 A; 800 V; 1.9 ?; 30 V

Tranzystory MOSFET; FQT1N60CTF-WS; ON SEMICONDUCTOR; 600 V; 200 mA; 30 V; 2.1 W

Tranzystory MOSFET; FQT5P10TF; ON SEMICONDUCTOR; 1 A; 1.05 ?; -100 V; 2 W

Tranzystor: N-MOSFET; unipolarny; 600V; 1.9A; 4.7ohm; 2.5W; -55+150 st.C; THT; IPAK

Moduły IGBT; FS150R12KT4; INFINEON TECHNOLOGIES; 10; 1.2 kV; 2.2 V; Not Halogen Free

Moduły IGBT; FS150R12N2T7; INFINEON TECHNOLOGIES

Moduły IGBT; FS25R12W1T4_B11; INFINEON TECHNOLOGIES; 24; 1.2 kV; 2.25 V; Not Halogen Free

Moduły IGBT; FS35R12W1T4; INFINEON TECHNOLOGIES; 24; 1.2 kV; 2.25 V; Not Halogen Free

Moduły IGBT; FS400R07A1E3; INFINEON TECHNOLOGIES; 16

Tranzystor: N-MOSFET; unipolarny; 600V; 10A; 0.75ohm; 50W; -55+150 st.C; THT; TO220F

Tranzystory bipolarne (BJT); FZT493TA; DIODES; NPN; 100 V; 1 A; 4

Tranzystory bipolarne (BJT); FZT593TA; DIODES; PNP; 100 V; 1 A; 4

Tranzystory bipolarne (BJT); FZT653TA; DIODES; NPN; 100 V; 2 A

Tranzystor: NPN; bipolarny; 70V; 4.5A; 0.8W; -55+150 st.C; SMD; SOT223

Tranzystory bipolarne (BJT); FZT851TA; DIODES; NPN; 3; 60 V; 6 A

Tranzystory bipolarne (BJT); FZT853TA; DIODES; NPN; 4; 100 V; 6 A

Tranzystory bipolarne (BJT); FZT857TA; DIODES; NPN; 3; 300 V; 3.5 A

Tranzystory bipolarne (BJT); FZT951TA; DIODES; PNP; 3; 60 V; 5 A

Tranzystor: PNP; bipolarny; -100V; -5A; 0.8W; -55+150 st.C; SMD; SOT223

Tranzystor: PNP; bipolarny; -140V; -4A; 0.8W; -55+150 st.C; SMD; SOT223

Tranzystory bipolarne (BJT); HE8050G-D-AB3-R; UTC; 25 V; 1.5 A

Tranzystory bipolarne (BJT); HE8050G-D-AE3-R; UTC

Tranzystory bipolarne (BJT); HJ44H11L-TA3-T; UTC

Tranzystory bipolarne (BJT); HJ45H11G-TN3-R; UTC

Tranzystory bipolarne (BJT); HJ45H11L-TA3-T; UTC