Memories

EEPROM (Electrically Erasable PROM); CAT25512VI-GT3; ON SEMICONDUCTOR; Serial; 20 MHz; 1.8 V; EEPROM

EEPROM (Electrically Erasable PROM); CAT25640HU4I-GT3; ON SEMICONDUCTOR; Serial; 10 MHz; 4.5 V; EEPROM

EEPROM (Electrically Erasable PROM); CAT25640VI-G-T3; ON SEMICONDUCTOR; SPI; 20 MHz; EEPROM; 1.8 V

EEPROM (Electrically Erasable PROM); CY15B102QN-50SXE; INFINEON TECHNOLOGIES; SPI; 50 MHz; 1.8 V

SRAM (Static Random Access Memory); CY62148EV30LL-55SXI; CYPRESS SEMICONDUCTOR; 1.27 mm; 20 mA; 11.303 mm; 512 kB

SRAM (Static Random Access Memory); CY7C1041GN30-10ZSXIT; CYPRESS SEMICONDUCTOR

SRAM (Static Random Access Memory); CY7C1071DV33-12BAXI; CYPRESS SEMICONDUCTOR; 1; Surface Mount; 9.5 mm; 3.6 V

SSD drive mSATA; 16GB; 200/40 MB/s; -40+85stC

SSD drive mSATA; 32GB; 200/40 MB/s; -40+85stC

Pamięć EEPROM, 1Kb; 256x4bit; 2µs; 2,.8V-5.25V; -40+85 st.C; THT; TO92

EEPROM (Electrically Erasable PROM); DS2431P+T&R; ANALOG DEVICES; 2.8 V; Serial; EEPROM; 5.25 V

EEPROM (Electrically Erasable PROM); DS2431Q+T&R; ANALOG DEVICES; 2.8 V; Serial; EEPROM; 5.25 V